Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

BACKGROUND

Integrated circuits may be formed from a variety of active and passivedevices on a semiconductor substrate. These active and passive devicesmay include, for example, transistors, resistors, capacitors, inductors,or the like. Additionally, the integrated circuits may also have aplurality of interleaved conductive layers and insulating layers inorder to interconnect the various active and passive devices into thedesired functional circuitry. This functional circuitry may be connectedto external devices using, for example, contact pads or other types ofconnection to provide power, ground and signal connections to thevarious active and passive devices.

In the race to further miniaturize the integrated circuits, and inparticular to further miniaturize the active and passive devices withinthe integrated circuits, problems have arisen with the various materialsthat have historically been used to form the active and passive devices.As such, new fabrication processes are investigated as potentialreplacement processes for various aspects of the active and passivedevices in an effort to make the active and passive devices not onlysmaller and more efficient.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 2A-2H illustrate cross-sectional view of a semiconductor device atvarious stages of the method of FIG. 1 in accordance with someembodiments of the present disclosure.

FIG. 3 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 4A-4H illustrate cross-sectional view of a semiconductor device atvarious stages of the method of FIG. 3 in accordance with someembodiments of the present disclosure.

FIG. 5 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 6A-6J illustrate cross-sectional view of a semiconductor device atvarious stages of the method of FIG. 5 in accordance with someembodiments of the present disclosure.

FIG. 7 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 8A-8C illustrate cross-sectional view of a semiconductor device atvarious stages of the method of FIG. 7 in accordance with someembodiments of the present disclosure.

FIGS. 9A-9C illustrate cross-sectional view of a semiconductor device atvarious stages of the method of FIG. 7 in accordance with someembodiments of the present disclosure.

FIG. 10 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 11A-11F illustrate cross-sectional view of a semiconductor deviceat various stages of the method of FIG. 10 in accordance with someembodiments of the present disclosure.

FIG. 12 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 13A-13F illustrate cross-sectional view of a semiconductor deviceat various stages of the method of FIG. 12 in accordance with someembodiments of the present disclosure.

FIG. 14 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 15A-15F illustrate cross-sectional view of a semiconductor deviceat various stages of the method of FIG. 14 in accordance with someembodiments of the present disclosure.

FIG. 16 is a flowchart of a method for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.

FIGS. 17A-17E illustrate cross-sectional view of a semiconductor deviceat various stages of the method of FIG. 16 in accordance with someembodiments of the present disclosure.

FIG. 18 is a cross-sectional view of a semiconductor structure accordingto some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, “around”, “about”, “approximately”, or “substantially”shall generally mean within 20 percent, or within 10 percent, or within5 percent of a given value or range. Numerical quantities given hereinare approximate, meaning that the term “around”, “about”,“approximately”, or “substantially” can be inferred if not expresslystated.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

This disclosure relates to integrated device fabrications and morespecifically to integrated circuit devices by using a two dimensionalinsulating layer as a bonding layer. Because of the two dimensionalinsulating layer, an integrated circuit device with good performancechannels can be formed. Furthermore, the separated fabrications of thesource/drain contacts and the channel layer prevent the channel layerfrom being damaged, improving the performance of the resultingsemiconductor device.

FIG. 1 is a flowchart of a method M10 for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.Various operations of the method M10 are discussed in association withperspective diagrams FIGS. 2A-2H. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. In operation S12 of method M10, a two dimensional (2D)insulating layer 120 is formed over a carrier 110, as shown in FIG. 2A.The carrier 110 may function to provide mechanical and/or structuresupport for features or structures of the semiconductor device. Thecarrier 110 may be a semiconductor substrate. For example, the carrier110 may include sapphire (e.g. crystalline Al₂O₃), e.g. a large grain ora single crystalline layer of sapphire or a coating of sapphire. Asanother example, the carrier 110 may be a sapphire substrate, e.g. atransparent sapphire substrate including, as an example, α-Al₂O₃. As yetanother example, the carrier 110 may include an elementary semiconductor(e.g. including silicon and/or germanium in crystal), a compoundsemiconductor (e.g. including at least one of oxide, silicon nitride,silicon carbide, gallium arsenic, gallium phosphide, indium phosphide,indium arsenide, or indium antimonide), an alloy semiconductor (e.g.including at least one of Cu, Al, AlCu, W, Ti, SiGe, GaAsP, AlInAs,AlGaAs, GalnAs, GaInP, or GaInAsP), or combinations thereof.

The 2D insulating layer 120 is formed on the carrier 110. The 2Dinsulating layer 120 may be formed directly on the carrier 110 such thatthe 2D insulating layer 120 and the carrier 110 are in contact (e.g.physical contact) with each other. In some embodiments, the 2Dinsulating layer 120 may be mechanically transferred and placed over thecarrier 110, and the 2D insulating layer 120 is adhered to the carrier110 through Van der Waals force. The 2D insulating layer 120 isconfigured to be a bonding layer to bond a structure formed thereon toanother semiconductor structure (the channel layer 190 of FIG. 2F inthis case).

It is noted that the term of “insulating” in the 2D insulating layer 120represents the electrically insulation in a lateral direction (i.e., inthe x direction and in the y direction) but not represents theelectrically insulation in a vertical direction (i.e., in the zdirection). That is, the 2D insulating layer 120 is electricallyinsulating in the lateral direction since it has large energy band gap,but may be electrically conductive (through electron tunneling) in thevertical direction. The energy band gap of the 2D insulating layer 120may be greater than about 5.5 eV. If the energy ban gap of the 2Dinsulating layer 120 is lower than about 5.0 eV, the 2D insulating layer120 may cause a current leakage problem in the channel layer 190 (seeFIG. 2F). In some embodiments, the 2D insulating layer 120 is made ofhexagonal boron nitride (h-BN), which is a stable crystalline form andhas an energy band gap of about 6 eV. The h-BN has a layered structuresimilar to graphite. Within each layer, boron and nitrogen atoms arebound by strong covalent bonds, whereas the layers are held together byweak Van der Waals forces.

The 2D insulating layer 120 is a 2D material which are crystallinematerials consisting of a single layer (monolayer) of atoms. If the 2Dmaterial includes few monolayers, the monolayers of the 2D material heldtogether by Van der Waals forces. Monolayers may be stacked upon eachother to form the 2D material layer including individual monolayers. Forexample, individual monolayers of h-BN may be stacked. In someembodiments, the 2D insulating layer 120 may be a monolayer to reducethe whole size of the semiconductor device; in some other embodiments,however, the 2D insulating layer 120 may include few layers. In someembodiments, the 2D insulating layer 120 has a thickness T1 of about 3.0(including interlayer distance) angstroms to about 50 angstroms. Thelower limit (about 3.0 angstroms) is the thickness of monolayer 2Dinsulating layer 120, and if the thickness T1 is greater than about 50angstroms, the electrical conductivity of the 2D insulating layer 120 inthe vertical direction (which will be described in detail in FIG. 2H) issuppressed.

In operation S14 of method M10, source/drain contacts 130 are formed onthe 2D insulating layer 120, as shown in FIG. 2B. The source/draincontacts 130 may be formed directly on the 2D insulating layer 120 suchthat the source/drain contacts 130 and the 2D insulating layer 120 arein contact (e.g. physical contact) with each other. In some embodiments,the source/drain contacts 130 may be formed of a conductive materialsuch as nickel, platinum, palladium, combinations of these, or the like.In some embodiments, a blanket conductive layer may be formed on the 2Dinsulating layer 120 in advance by a deposition process such as CVD,PVD, ALD, combinations of these, or the like, and then a patterningprocess is performed to pattern the blanket conductive layer to form thesource/drain contacts 130 separated from each other.

In operation S16 of method M10, a gate dielectric layer 140 and a gateelectrode 150 are sequentially formed over the source/drain contacts 130and the 2D insulating layer 120, as shown in FIG. 2C. In someembodiments, the gate dielectric layer 140 is conformally deposited onthe source/drain contacts 130 and the 2D insulating layer 120. In someexamples, the gate dielectric layer 140 includes silicon oxide, siliconnitride, gallium oxide, aluminum oxide, scandium oxide, zirconium oxide,lanthanum oxide, hafnium oxide, or other suitable materials. In someembodiments, the gate dielectric layer 140 is formed by an atomic layerdeposition (ALD) method. In some other embodiments, the gate dielectriclayer 140 is formed by a plasma enhanced chemical vapor deposition(PECVD) or a low pressure chemical vapor deposition (LPCVD).

The gate electrode 150 is formed on the gate dielectric layer 140.Lithography and etching processes are performed on a blanket conductivelayer to define the gate electrode 150. In some embodiments, the blanketconductive layer may be formed on the gate dielectric layer 140 inadvance by a deposition process such as CVD, PVD, ALD, combinationsthereof, or the like, and then a patterning process is performed topattern the blanket conductive layer to form the gate electrode 150between the source/drain contacts 130. In some embodiments, the gateelectrode 150 includes a conductive material layer that includes arefractory metal or its compounds, e.g., titanium (Ti), titanium nitride(TiN), titanium tungsten (TiW), tungsten (W), or other suitablematerials. In some other embodiments, the gate electrode 150 includesnickel (Ni), gold (Au) or copper (Cu).

In operation S18 of method M10, as shown in FIG. 2D, a transfer layer160 is formed on the gate electrode 150 and the gate dielectric layer140 in order to begin the process of transferring the gate electrode150, the source/drain contacts 130, and the 2D insulating layer 120 to asubstrate 170 (not illustrated in FIG. 2D but illustrated and discussedfurther below with respect to FIG. 2G). In some embodiments, thetransfer layer 160 may be a material that may be used to hold andprotect the elements underneath during the removal of the carrier 110from the 2D insulating layer 120, while also allowing for an easyremoval of the transfer layer 160 once the structures underneath hasbeen transferred. For example, the transfer layer 160 may be polymermaterial such as polymethyl-methacrylate (PMMA), methyacrylic resin, orNovolac resin, or the like. In some other embodiments, the transferlayer 160 may be a dielectric layer such as an oxide layer or a nitridelayer, or the like.

In some embodiments in which the transfer layer 160 is polymer material,the transfer layer 160 may be placed on the gate electrode 150 using,e.g., a spin-coating process, although any other suitable depositionprocess may also be utilized. Once in place, the polymer material may becured and solidified. This solidified polymer material both protects thestructure underneath and also allows for the movement and control of the2D insulating layer 120 through the transfer layer 160. In someembodiments in which the transfer layer 160 is dielectric layer, thetransfer layer 160 may be deposited on the gate electrodes 150 using,e.g., PVD, CVD, ALD, or other suitable processes.

In operation S20 of method M10, the 2D insulating layer 120 is removedfrom the carrier 110, as shown in FIG. 2E. Specifically, once thetransfer layer 160 is in place over the gate electrodes 150 and the gatedielectric layer 140, the carrier 110 may be removed in order to exposea back side of the 2D insulating layer 120. As mentioned above, sincethe 2D insulating layer 120 is adhered to the carrier 110 through Vander Waals force, the delamination force of the 2D insulating layer 120is not so strong, such that the structures formed over the 2D insulatinglayer 120 is not easy to be damaged.

FIG. 2F illustrates a substrate 170 onto which the structure in FIG. 2Emay be transferred (the transfer is not illustrated in FIG. 2F but isillustrated and discussed below with respect to FIG. 2G). In operationS22 of method M10, a channel layer 190 is formed over a substrate 170,as shown in FIG. 2F. The substrate 170 may be a semiconductor materialsuch as silicon, germanium, diamond, or the like. Alternatively,compound materials such as silicon germanium, silicon carbide, galliumarsenic, indium arsenide, indium phosphide, silicon germanium carbide,gallium arsenic phosphide, gallium indium phosphide, combinations ofthese, and the like, with other crystal orientations, may also be used.The substrate 170 may be doped with a p-type dopant, such as boron,aluminum, gallium, or the like, although the substrate may alternativelybe doped with an n-type dopant, as is known in the art. In someembodiments, the substrate 170 may be made of a conductive material,which may be a back gate of the resulting semiconductor device (see FIG.2H).

A buffer layer 180 may be optionally formed on the substrate 170. Thebuffer layer 180 may be formed directly on the substrate 170 such thatthe buffer layer 180 and the substrate 170 are in contact (e.g. physicalcontact) with each other. In some embodiments, the buffer layer 180 maybe made of boron nitride (BN), e.g., hexagonal boron nitride (h-BN)which may be mechanically transferred and placed over the substrate 170.In some embodiments, the buffer layer 180 may be a monolayer to reducethe whole size of the semiconductor device; in some other embodiments,however, the buffer layer 180 may include few layers. Since the h-BN hasa flat top surface, the channel layer 190 formed thereon is flat. Theflat channel layer 190 could reduce the electron scattering effecttherein and make carrier mobility higher.

The channel layer 190 is then formed over the substrate 170. In someembodiments, when the buffer layer 180 is formed on the substrate 170,the channel layer 190 is formed directly on the buffer layer 180 suchthat the channel layer 190 and the buffer layer 180 are in contact (e.g.physical contact) with each other. In some other embodiments, when thebuffer layer 180 is omitted, the channel layer 190 is formed directly onthe substrate 170 such that the channel layer 190 and the substrate 170are in contact (e.g. physical contact) with each other.

The channel layer 190 may be made of transition metal dichalcogenide(TMD) materials which include a class of materials that have the generalchemical formula of MX₂, wherein M is a transition metal element, and Xis a chalcogen. The exemplary materials of the transition metal Minclude Ti, V, Co, Ni, Zr, Mo, Tc, Rh, Pd, Hf, Ta, W, Re, Ir, In, Sn, orPt. Element X may be S, Se, or Te. Exemplary TMD materials include MoS₂,MoSe₂, WS₂, WSe₂, MoTe₂, and WTe₂ in accordance with some exemplaryembodiments. TMDs form a layered structure with the form X-M-X, whereinthe chalcogen atoms X are distributed in two hexagonal planes separatedby a plane of metal atoms M. Stated in another way, the channel layer190 includes a first layer 192, a second layer 194 over the first layer192, and a third layer 196 over the second layer 194. The first layer192 and the third layer 196 include the chalcogen atoms X, and thesecond layer 194 includes the transition metal M. In some embodiments,the first layer 192, the second layer 194, and the third layer 196 aremonolayers.

In operation S24 of method M10, the 2D insulating layer 120 is bonded onthe channel layer 190, as shown in FIG. 2G. In some embodiment, aheating process is performed to bond the 2D insulating layer 120 on thechannel layer 190 at a temperature lower than about 300° C., e.g., about60° C. to about 200° C. If the temperature is lower than about 60° C.,the 2D insulating layer 120 may not be bond on the channel layer 190successfully; if the temperature is higher than about 300° C., thechannel layer 190 may suffer unwanted damage. In some embodiments, theheating process is performed in a vacuum-environment, and a vacuumprocess may be added before the heating process. The vacuum environmenthelps reduce the heating temperature of the heating process, preventingthe channel layer 190 from being damaged.

In operation S26 of method M10, the transfer layer 160 (see FIG. 2G) isremoved, as shown in FIG. 2H. The transfer layer 160 may be removedusing a stripping or etching process to remove the material of thetransfer layer 160 form the gate electrode 150 and the gate dielectriclayer 140. In some embodiments, the transfer layer 160 may be removed byapplying acetone to the polymer if the transfer layer 160 is made ofpolymers such as PMMA. In some other embodiments, the transfer layer 160may be removed by applying HCl, HNO₃, and/or liquid state FeCl₃ to thetransfer layer 160 if the transfer layer 160 is made of metal such asNi, Au, Cu, or other suitable materials.

In FIG. 2H, the semiconductor device includes the substrate 170, thechannel layer 190, the 2D insulating layer 120, the source/draincontacts 130, the gate dielectric layer 140, and the gate electrode 150.The channel layer 190 is formed over the substrate 170. The 2Dinsulating layer 120 is formed over the channel layer 190. Thesource/drain contacts 130 are formed over the 2D insulating layer 120and separated from the channel layer 190. That is, the 2D insulatinglayer 120 is formed between the source/drain contact 130 and the channellayer 190. The gate dielectric layer 140 is formed over the 2Dinsulating layer 120 and the source/drain contacts 130. The gateelectrode 150 is formed over the gate dielectric layer 140 and betweenthe source/drain contacts 130.

In FIG. 2H, the 2D insulating layer 120 is a good insulator in thelateral direction, such that the 2D insulating layer 120 provides goodinsulation between the two source/drain contacts 130. Also, the 2Dinsulating layer 120 is a good conductor in the vertical direction(through electron tunneling), so the 2D insulating layer 120interconnects the source/drain contact 130 and the channel layer 190.With this configuration, the electrons can flow from one of thesource/drain contacts 130 to another one of the source/drain contacts130 through the channel layer 190 but not through the 2D insulatinglayer 120 in the lateral direction. Moreover, the channel layer 190 maybe a 2D material which has electrical conductivity in the lateraldirection. That is, the channel layer 190 has a lateral electricalconductivity higher than the 2D insulating layer 120 (and the bufferlayer 180).

In some embodiments, the buffer layer 180 is formed between the channellayer 190 and the substrate 170. As such, the channel layer 190 isformed between the buffer layer 180 and the 2D insulating layer 120. Thebuffer layer 180 provides a flat interface for depositing the channellayer 190, and the 2D insulating layer 120 also provides another flatinterface for the channel layer 190. Therefore, the channel layer 190reduces the electron scattering effect therein and makes carriermobility higher. Furthermore, the buffer layer 180 is also a goodinsulator in the lateral direction if the buffer layer 180 is made ofh-BN. That is, the buffer layer 180 and the 2D insulating layer 120 bothimprove the current leakage problem in the channel layer 190.

As mentioned above, the formation of the source/drain contacts 130 mayinclude depositing a blanket conductive layer and then performing theblanket conductive layer to form the source/drain contacts 130. Thedepositing of the blanket conductive layer may be a high temperatureprocess, and the patterning of the blanket conductive layer may includea wet etching process. The high temperature process may worse thechannel layer 190 and the wet etching process may induce the channellayer 190 stripped if the blanket conductive layer is formed on thechannel layer 190. In the embodiments of the method M10, the blanketconductive layer and the channel layer 190 are separately formed, thehigh temperature during the depositing process of the blanket conductivelayer does not affect the channel layer 190, and the etchants using inpatterning the blanket conductive layer does not strip the channel layer190. Also, since the blanket conductive layer is directly formed on the2D insulating layer 120, instead of directly formed on the channel layer190, the metal pinning on the channel layer 190 can be avoided, and thecontact resistant can be improved. As such, the channel layer 190 inFIG. 2H has a good device performance.

FIG. 3 is a flowchart of a method M30 for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.Various operations of the method M30 are discussed in association withperspective diagrams FIGS. 4A-4H. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. The present embodiment may repeat reference numeralsand/or letters used in FIGS. 2A-2H. This repetition is for the purposeof simplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed. In thefollowing embodiments, the structural and material details describedbefore are not repeated hereinafter, and only further information issupplied to perform the semiconductor devices of FIGS. 4A-4H. Inoperation S32 of method M30, a 2D insulating layer 120 is formed over acarrier 110, as shown in FIG. 4A. In operation S34 of method M30, a gatedielectric layer 140 is formed over the 2D insulating layer 120, asshown in FIG. 4A. The gate dielectric layer 140 may be formed directlyon the 2D insulating layer 120 such that the gate dielectric layer 140and the 2D insulating layer 120 are in contact (e.g. physical contact)with each other.

In operation S36 of method M30, source/drain contacts 130 are formedover the carrier 110 and in contact with the 2D insulating layer 120 andthe gate dielectric layer 140, as shown in FIG. 4B. Specifically,openings 145 may be formed in the gate dielectric layer 140 and the 2Dinsulating layer 120 in advance by performing an etching process forexample, such that the openings 145 expose the carrier 110. Then,conductive materials are filled in the openings 145 to form thesource/drain contacts 130. Thus, the source/drain contacts 130 are incontact with the carrier 110, the 2D insulating layer 120, and the gatedielectric layer 140. In FIG. 4B, since the etching process is notperformed over the channel layer 190 (see FIG. 4F), this process doesnot damage the channel layer 190.

In operation S38 of method M30, a gate electrode 150 is formed over thegate dielectric layer 140 and between the source/drain contacts 130, asshown in FIG. 4C. For example, a mask (not shown) may be formed over thestructure of FIG. 4C, and the mask exposes a portion of the gatedielectric layer 140 between the source/drain contacts 130. The portionof the gate dielectric layer 140 is then removed to form a recess R inthe gate dielectric layer 140, and conductive materials are filled inthe recess R to form the gate electrode 150.

In operation S40 of method M30, as shown in FIG. 4D, a transfer layer160 is formed on the gate electrode 150, the source/drain contacts 130,and the gate dielectric layer 140 in order to begin the process oftransferring the gate electrode 150, the source/drain contacts 130, andthe 2D insulating layer 120 to a substrate 170 (not illustrated in FIG.4D but illustrated and discussed further below with respect to FIG. 4G).

In operation S42 of method M30, the 2D insulating layer 120 and thesource/drain contacts 130 are removed from the carrier 110, as shown inFIG. 4E. Specifically, once the transfer layer 160 is in place over thegate electrodes 150, the gate dielectric layer 140, and the source/draincontacts 130, the carrier 110 may be removed in order to expose a backside of the 2D insulating layer 120 and back sides of the source/draincontacts 130. As mentioned above, since the 2D insulating layer 120 isadhered to the carrier 110 through Van der Waals force, the delaminationforce of the 2D insulating layer 120 is not so strong, and thesource/drain contacts 130 are easier to be removed from the carrier 110,such that the structures formed over the 2D insulating layer 120 is noteasy to be damaged.

FIG. 4F illustrates a substrate 170 onto which the structure in FIG. 4Emay be transferred (the transfer is not illustrated in FIG. 4F but isillustrated and discussed below with respect to FIG. 4G). In operationS44 of method M30, a channel layer 190 is formed over a substrate 170,as shown in FIG. 4F. In some embodiments, a buffer layer 180 may beoptionally formed on the substrate 170. The channel layer 190 is thenformed on the substrate 170 (or on the buffer layer 180).

In operation S46 of method M30, the 2D insulating layer 120 is bonded onthe channel layer 190, as shown in FIG. 4G. In some embodiment, aheating process is performed to bond the 2D insulating layer 120 on thechannel layer 190 at a temperature lower than about 300° C., e.g., about60° C. to about 200° C. If the temperature is lower than about 60° C.,the 2D insulating layer 120 may not be bond on the channel layer 190successfully; if the temperature is higher than about 300° C., thechannel layer 190 may suffer unwanted damage. In some embodiments, theheating process is performed in a vacuum-environment, and a vacuumprocess may be added before the heating process. The vacuum environmenthelps reducing the heating temperature of the heating process.

In operation S48 of method M30, the transfer layer 160 is removed, asshown in FIG. 4H. In FIG. 4H, the semiconductor device includes thesubstrate 170, the channel layer 190, the 2D insulating layer 120, thesource/drain contacts 130, the gate dielectric layer 140, and the gateelectrode 150. The channel layer 190 is formed over the substrate 170.The 2D insulating layer 120 is formed over the channel layer 190. Thesource/drain contacts 130 are formed over the channel layer 190, and thesource/drain contacts 130 are in contact with the channel layer 190, the2D insulating layer 120, and the gate dielectric layer 140. That is, abottom surface 130 b of the source/drain contacts 130 and a bottomsurface 120 b of the 2D insulating layer 120 are substantially coplanar.The gate dielectric layer 140 is formed over the 2D insulating layer 120and the source/drain contacts 130. The gate electrode 150 is formed overthe gate dielectric layer 140 and between the source/drain contacts 130.

In FIG. 4H, the 2D insulating layer 120 is a good insulator along thelateral direction, such that the 2D insulating layer 120 provides goodinsulation between the two source/drain contacts 130. With thisconfiguration, the electrons can flow from one of the source/draincontacts 130 to another one of the source/drain contacts 130 through thechannel layer 190 but not through the 2D insulating layer 120 in thelateral direction. Moreover, the channel layer 190 may be a 2D materialwhich has electrical conductivity in the lateral direction. That is, thechannel layer 190 has a lateral electrical conductivity higher than the2D insulating layer 120 (and the buffer layer 180).

In some embodiments, the buffer layer 180 is formed between the channellayer 190 and the substrate 170. As such, the channel layer 190 isformed between the buffer layer 180 and the 2D insulating layer 120. Thebuffer layer 180 provides a flat interface for depositing the channellayer 190, and the 2D insulating layer 120 also provides another flatinterface for the channel layer 190. Therefore, the channel layer 190reduces the electron scattering effect therein and makes carriermobility higher. Furthermore, the buffer layer 180 is also a goodinsulator in the lateral direction if the buffer layer 180 is made ofh-BN.

The formation of the source/drain contacts 130 may include depositingconductive materials in the source/drain openings 145 to form thesource/drain contacts 130. The depositing of the conductive materialsmay be a high temperature process. The high temperature process mayworse the channel layer 190. In the embodiments of the method M30,however, the source/drain openings 145 and the channel layer 190 areseparately formed, the high temperature during the depositing process ofthe blanket conductive layer does not affect the channel layer 190.Also, since the source/drain openings 145 is formed on the carrier 110,instead of directly formed on the channel layer 190, the metal pinningon the channel layer 190 can be avoided, where the metal pinning mayraise the threshold voltage of the gate of the formed semiconductordevice. As such, the channel layer 190 in FIG. 4H has a good deviceperformance.

FIG. 5 is a flowchart of a method M50 for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.Various operations of the method M50 are discussed in association withperspective diagrams FIGS. 6A-6J. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. The present embodiment may repeat reference numeralsand/or letters used in FIGS. 2A-2H. This repetition is for the purposeof simplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed. In thefollowing embodiments, the structural and material details describedbefore are not repeated hereinafter, and only further information issupplied to perform the semiconductor devices of FIGS. 6A-6J. Inoperation S52 of method M50, a 2D insulating layer 120 is formed over acarrier 110, as shown in FIG. 6A. In operation S54 of method M50, a gatedielectric layer 140 is formed over the 2D insulating layer 120, asshown in FIG. 6A. The gate dielectric layer 140 may be formed directlyon the 2D insulating layer 120 such that the gate dielectric layer 140and the 2D insulating layer 120 are in contact (e.g. physical contact)with each other.

In operation S56 of method M50, a gate electrode 150 is formed over thegate dielectric layer 140, as shown in FIG. 6B. For example, a mask (notshown) may be formed over the structure of FIG. 6A, and the mask exposesa portion of the gate dielectric layer 140. The portion of the gatedielectric layer 140 is then removed to form a recess R in the gatedielectric layer 140, and conductive materials are filled in the recessR to form the gate electrode 150.

In operation S58 of method M50, source/drain openings 145 are formed inthe gate dielectric layer 140, as shown in FIG. 6C. Specifically, theopenings 145 may be formed in the gate dielectric layer 140 and the 2Dinsulating layer 120 by performing an etching process for example, suchthat the source/drain openings 145 expose the carrier 110.

In operation S60 of method M50, a transfer layer 160 is formed on thegate electrodes 150 and the gate dielectric layer 140 and in thesource/drain openings 145, as shown in FIG. 6D. Specifically, thetransfer layer 160 may be deposited on the structure of FIG. 6C in orderto begin the process of transferring the gate electrode 150 and the 2Dinsulating layer 120 to a substrate 170 (not illustrated in FIG. 6D butillustrated and discussed further below with respect to FIG. 6G).

In operation S62 of method M50, the 2D insulating layer 120 and thetransfer layer 160 are removed from the carrier 110, as shown in FIG.6E. Specifically, once the transfer layer 160 is in place over the gateelectrodes 150 and the gate dielectric layer 140, the carrier 110 may beremoved in order to expose a back side of the 2D insulating layer 120and back sides of the transfer layer 160. As mentioned above, since the2D insulating layer 120 is adhered to the carrier 110 through Van derWaals force, the delamination force of the 2D insulating layer 120 isnot so strong, and the transfer layer 160 are easier to be removed fromthe carrier 110, such that the structures formed over the 2D insulatinglayer 120 is not easy to be damaged.

FIG. 6F illustrates a substrate 170 onto which the structure in FIG. 6Emay be transferred (the transfer is not illustrated in FIG. 6F but isillustrated and discussed below with respect to FIG. 6G). In operationS64 of method M50, a channel layer 190 is formed over a substrate 170,as shown in FIG. 6F. In some embodiments, a buffer layer 180 may beoptionally formed on the substrate 170. The channel layer 190 is thenformed on the substrate 170 (or on the buffer layer 180).

In operation S66 of method M50, the 2D insulating layer 120 is bonded onthe channel layer 190, as shown in FIG. 6G. In some embodiment, aheating process is performed to bond the 2D insulating layer 120 on thechannel layer 190 at a temperature lower than about 300° C., e.g., about100° C. to about 200° C. If the temperature is lower than about 100° C.,the 2D insulating layer 120 may not be bond on the channel layer 190successfully; if the temperature is higher than about 300° C., thechannel layer 190 may suffer unwanted damage. In some embodiments, theheating process is performed in a vacuum-environment, and a vacuumprocess may be added before the heating process. The vacuum environmenthelps reducing the heating temperature of the heating process.

In operation S68 of method M50, the transfer layer 160 is removed toexpose the channel layer 190 after the bonding process, as shown in FIG.6H. The transfer layer 160 may be removed using a stripping or etchingprocess to remove the material of the transfer layer 160 form the gateelectrode 150 and the gate dielectric layer 140. In some embodiments,the transfer layer 160 may be removed by applying acetone to the polymerif the transfer layer 160 is made of polymers such as PMMA. In someother embodiments, the transfer layer 160 may be removed by applyingHCl, HNO₃, and/or liquid state FeCl₃ to the transfer layer 160 if thetransfer layer 160 is made of metal such as Ni, Au, Cu, or othersuitable materials.

In operation S70 of method M50, portions of the third layer 196 of thechannel layer 190 exposed by the source/drain openings 145 are removed,as shown in FIG. 6I. Specifically, as mentioned above, the third layer196 of the channel layer 190 includes chalcogen atoms X, which may belower conductivity than the metal atoms M. The portion of the thirdlayer 196 exposed by the source/drain openings 145 may be removed toexpose the second layer 194, which includes transition metal M. Theremoval process of the third layer 196 may be performed by using a H₂plasma treatment. The H₂ plasma will react with the chalcogen atoms X toremove the exposed third layer 196. The remaining third layer 196 isbetween the gate dielectric layer 140 and the second layer 194.

In operation S72 of method M50, source/drain contacts 130 are formed inthe source/drain openings 145 and in contact with the second layer 194of the channel layer 190, as shown in FIG. 6J. Specifically, conductivematerials are filled in the openings 145 to form the source/draincontacts 130. Since the second layer 194 is exposed, the second layer194 may be a seed layer to form the source/drain contacts 130. Further,since the source/drain contacts 130 are in contact with the second layer194, the electrical conductivity from the source to drain is improved.

In FIG. 6J, the semiconductor device includes the substrate 170, thechannel layer 190, the 2D insulating layer 120, the source/draincontacts 130, the gate dielectric layer 140, and the gate electrode 150.The channel layer 190 is formed over the substrate 170 and includes thefirst layer 192, the second layer 194, and the third layer 196, wherethe second layer 194 is between the first layer 192 and the third layer196. The 2D insulating layer 120 is formed over the channel layer 190.The source/drain contacts 130 are formed over the channel layer 190, andthe source/drain contacts 130 are in contact with the second layer 194of the channel layer 190. That is, a bottom surface 130 b of thesource/drain contacts 130 is lower than a bottom surface 120 b of the 2Dinsulating layer 120. The third layer 196 of the channel layer 190 isbetween the gate dielectric layer 140 and the second layer 194, but notbetween the source/drain contacts 130 and the second layer 194. The 2Dinsulating layer 120 is separated from the second layer 194. The gatedielectric layer 140 is formed over the 2D insulating layer 120 and thesource/drain contacts 130. The gate electrode 150 is formed over thegate dielectric layer 140 and between the source/drain contacts 130.

In FIG. 6J, the 2D insulating layer 120 is a good insulator along thelateral direction, such that the 2D insulating layer 120 provides goodinsulation between the two source/drain contacts 130. With thisconfiguration, the electrons can flow from one of the source/draincontacts 130 to another one of the source/drain contacts 130 through thechannel layer 190 but not through the 2D insulating layer 120 in thelateral direction. Moreover, the channel layer 190 is a 2D materialwhich has electrical conductivity in the lateral direction. That is, thechannel layer 190 has a lateral electrical conductivity higher than the2D insulating layer 120 (and the buffer layer 180).

In some embodiments, the buffer layer 180 is formed between the channellayer 190 and the substrate 170. As such, the channel layer 190 isformed between the buffer layer 180 and the 2D insulating layer 120. Thebuffer layer 180 provides a flat interface for depositing the channellayer 190, and the 2D insulating layer 120 also provides another flatinterface for the channel layer 190. Therefore, the channel layer 190reduces the electron scattering effect therein and makes carriermobility higher. Furthermore, the buffer layer 180 is also a goodinsulator in the lateral direction if the buffer layer 180 is made ofh-BN.

FIG. 7 is a flowchart of a method M80 for making a semiconductor deviceaccording to aspects of the present disclosure in various embodiments.Various operations of the method M80 are discussed in association withperspective diagrams FIGS. 8A-8C. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. In operation S82 of method M80, a first device 210 isprovided, as shown in FIG. 8A. In FIG. 8A, the first device 210 is afunctional device, e.g., a CMOS or an integrated circuit (IC), or aportion thereof, that may include static random access memory (SRAM),logic circuits, passive components, such as resistors, capacitors, andinductors, and/or active components, such as p-type field effecttransistors (PFETs), n-type FETs (NFETs), multi-gate FETs, bipolartransistors, high voltage transistors, high frequency transistors, othermemory cells, and combinations thereof.

In some embodiments, the first device 210 includes at least onesemiconductor device and a first inter-metal dielectric (IMD) structure214 formed on the semiconductor device. For example, the first device210 may include two semiconductor device 212 a and 212 b adjacent toeach other. In some embodiments, the semiconductor devices 212 a and 212b may be the semiconductor device shown in FIG. 2H (or FIG. 4H or FIG.6J), and the present disclosure is not limited in this respect. In FIG.8A, the structures of FIG. 2H are used for illustration purposes only.In some other embodiments, the first device 210 does not include 2Dmaterial layers. The semiconductor devices 212 a and 212 b may bedifferent. For example, the gate electrodes 150 a and 150 b in thesemiconductor devices 212 a and 212 b may have different work functionsand/or different materials. In some other examples, the channel layers190 a and 190 b in the semiconductor devices 212 a and 212 b may havedifferent materials.

The first IMD structure 214 includes conductive lines 215 a, dielectriclayers 215 b, and a plurality of top conductive lines 215 c. Thedielectric layers 215 b are deposited over the semiconductor devices 212a and 212 b, and the conductive lines 215 a are embedded in thedielectric layers 215 b. The top conductive lines 215 c are embedded inthe topmost dielectric layer 215 b. The conductive lines 215 ainterconnect one of the top conductive lines 215 c to one of thesource/drain contacts 130. In some embodiments, the top conductive lines215 c are electrically isolated from each other. It is noted that theroute of the conductive lines 215 a in FIG. 8A are illustrated only, andthe present disclosure is not limited in this respect.

In operation S84 of method M80, a second device 220 is provided, asshown in FIG. 8B. In FIG. 8B, the second device 220 is a functionaldevice, e.g., a CMOS or an integrated circuit (IC), or a portionthereof, that may include static random access memory (SRAM), logiccircuits, passive components, such as resistors, capacitors, andinductors, and/or active components, such as p-type field effecttransistors (PFETs), n-type FETs (NFETs), multi-gate FETs, bipolartransistors, high voltage transistors, high frequency transistors, othermemory cells, and combinations thereof.

In some embodiments, the second device 220 includes at least onesemiconductor device, a second IMD structure 224 formed on thesemiconductor device, and a 2D insulating layer 226 formed on the secondIMD structure 224. For example, the second device 220 may include twosemiconductor device 222 a and 222 b adjacent to each other. In someembodiments, the semiconductor devices 222 a and 222 b may be thesemiconductor device shown in FIG. 2H (or FIG. 4H or FIG. 6J), and thepresent disclosure is not limited in this respect. In FIG. 8B, thestructures of FIG. 2H are used for illustration purposes only. In someother embodiments, the second device 220 does not include 2D channellayers. The semiconductor devices 222 a and 222 b may be different. Forexample, the gate electrodes 150 c and 150 d in the semiconductordevices 222 a and 222 b may have different work functions and/ordifferent materials. In some other examples, the channel layers 190 cand 190 d in the semiconductor devices 222 a and 222 b may havedifferent materials. In some embodiments, the 2D insulating layer 226may have similar (or the same) material to the 2D insulating layer 120of FIG. 2H.

The second IMD structure 224 includes conductive lines 225 a, dielectriclayers 225 b, and a plurality of top conductive lines 225 c. Thedielectric layers 225 b are deposited over the semiconductor devices 222a and 222 b, and the conductive lines 225 a are embedded in thedielectric layers 225 b. The top conductive lines 225 c are embedded inthe topmost dielectric layer 225 b. The conductive lines 225 ainterconnect one of the top conductive lines 225 c to one of thesource/drain contacts 130. In some embodiments, the top conductive lines225 c are electrically isolated from each other. It is noted that theroute of the conductive lines 225 a in FIG. 8B are illustrated only, andthe present disclosure is not limited in this respect.

The 2D insulating layer 226 covers the second IMD structure 224, i.e.,the top conductive lines 225 c. In some embodiments, the 2D insulatinglayer 226 has a thickness T2 of about 3.0 angstroms to about 50angstroms. The lower limit (about 0.3 angstroms) is the thickness ofmonolayer 2D insulating layer 226, and if the thickness T2 is greaterthan about 50 angstroms, the electrical conductivity of the 2Dinsulating layer 226 in the vertical direction (which will be describedin detail in the operation S86) is suppressed.

In operation S86 of method M80, the second device 220 is bound to thefirst device 210 using the 2D insulating layer 226 as a bonding layer,as shown in FIG. 8C. In some embodiments, a heating process is performedto bond the 2D insulating layer 226 on the first device 210 at atemperature lower than about 300° C., e.g., about 100° C. to about 200°C. If the temperature is lower than about 100° C., the 2D insulatinglayer 226 may not be bond on the first device 210 successfully; if thetemperature is higher than about 300° C., the channel layers 190 maysuffer unwanted damage. In some embodiments, the heating process isperformed in a vacuum-environment, and a vacuum process may be addedbefore the heating process. The vacuum environment helps reduce theheating temperature of the heating process.

In FIG. 8C, the 2D insulating layer 226 is disposed between the topconductive lines 215 c of the first device 210 and the top conductivelines 225 c of the second device 220. The top conductive lines 215 c arealigned with the top conductive lines 225 c. As mentioned above, the 2Dinsulating layer 226 is a good conductor in a vertical direction. Thetop conductive lines 215 c of the first device 210 is able to beelectrically connected to the top conductive lines 225 c of the seconddevice 220 through the 2D insulating layer 226. Also, since the 2Dinsulating layer 226 is adhered to other elements (such as a carrier ora substrate) via Van der Waals forces, the 2D insulating layer 226 canbe a good debonding layer.

FIGS. 9A-9C are cross-sectional views of the method M80 formanufacturing a semiconductor structure at various stages according tosome embodiments. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.Reference is made to FIG. 9A, a first device 210 is provided. The firstdevice 210 of FIG. 9A is the same as the first device 210 of FIG. 8A,and the detailed description is not repeated herein.

Reference is made to FIG. 9B, a plurality of second device 220 a and 220b are provided. In FIG. 9B, the second device 220 a and 220 b arefunctional devices, e.g., a CMOS or an integrated circuit (IC), or aportion thereof, that may include static random access memory (SRAM),logic circuits, passive components, such as resistors, capacitors, andinductors, and/or active components, such as p-type field effecttransistors (PFETs), n-type FETs (NFETs), multi-gate FETs, bipolartransistors, high voltage transistors, high frequency transistors, othermemory cells, and combinations thereof.

In some embodiments, the second device 220 a (220 b) includes asemiconductor device 222 a (222 b), a second IMD structure 224 formed onthe semiconductor device 222 a (222 b), and a 2D insulating layer 226formed on the second IMD structure 224. In some embodiments, thesemiconductor devices 222 a and 222 b may be the semiconductor deviceshown in FIG. 2H (or FIG. 4H or FIG. 6J), and the present disclosure isnot limited in this respect. In FIG. 9B, the structures of FIG. 2H areused for illustration purposes only. The semiconductor devices 222 a and222 b may be different. For example, the gate electrodes 150 c and 150 din the semiconductor devices 222 a and 222 b may have different workfunctions and/or different materials. In some other examples, thechannel layers 190 c and 190 d in the semiconductor devices 222 a and222 b may have different materials. In some embodiments, the 2Dinsulating layer 226 may have similar (or the same) material to the 2Dinsulating layer 120 of FIG. 2H.

The second IMD structure 224 includes conductive lines 225 a, dielectriclayers 225 b, and a plurality of top conductive lines 225 c. Thedielectric layers 225 b are deposited over the semiconductor devices 222a and 222 b, and the conductive lines 225 a are embedded in thedielectric layers 225 b. The top conductive lines 225 c are embedded inthe topmost dielectric layer 225 b. The conductive lines 225 ainterconnect one of the top conductive lines 225 c to one of thesource/drain contacts 130. It is noted that the route of the conductivelines 225 a in FIG. 9B are illustrated only, and the present disclosureis not limited in this respect. The 2D insulating layer 226 covers thesecond IMD structure 224, i.e., the top conductive lines 225 c.

Reference is made to FIG. 9C. The second devices 220 a and 220 b arebound to the first device 210 using the 2D insulating layers 226 asbonding layers, as shown in FIG. 9C. Since the bonding process issimilar to the bonding process of FIG. 8C, the detailed description isnot repeated herein.

In some embodiments, one or more singulating process(es) may beperformed during the methods M10, M30, M50, and M80. FIG. 10 is aflowchart of a method M100 for making a semiconductor device accordingto aspects of the present disclosure in various embodiments. Variousoperations of the method M100 are discussed in association withcross-section diagrams FIGS. 11A-11F. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. In operation S101 of method M100, a first wafer 310 isprovided, as shown in FIG. 11A. The first wafer 310 includes a pluralityof first dies 312 connected to each other. Each of the first dies 312includes the structure of FIG. 2D, the structure of FIG. 4D, thestructure of FIG. 6D, or the structure of FIG. 8B or 9B. That is, theoperation S101 includes the operations S12 to S18 of the method M10, theoperations S32 to S40 of the method M30, the operations S52 to S60 ofthe method M50, or the operation S84 of the method M80. In FIG. 11A, thestructures of FIG. 2D are used for illustration purposes only.

In operation S103 of method M100, the first dies 312 of the first wafer310 are singulated, as shown in FIG. 11B. To singulate the first die 312of the first wafer 310 from adjacent first dies 312, tape (not shown)may be applied to the first wafer 310. The tape may include dicing tapethat supports the first wafer 310 during the singulation process. Thefirst wafer 310 may be singulated using a laser cutting device, sawblade, or other suitable techniques.

In operation S105 of method M100, the 2D insulating layer 120 of thefirst die 312 is removed from the carrier 110, as shown in FIG. 11C.Since the details of the removal process is mentioned above (i.e., theoperations S20, S42, and S62), the detailed description is not repeatedherein.

In operation S107 of method M100, a second wafer 320 is provided, asshown in FIG. 11D. The second wafer 320 includes a plurality of seconddies 322 connected to each other. Each of the second dies 322 includesthe structure of FIG. 2F, the structure of FIG. 4F, the structure ofFIG. 6F, or the structure of FIG. 8A or 9A. That is, the operation S101includes the operation S22 of the method M10, the operation S44 of themethod M30, the operation S64 of the method M50, or the operation S82 ofthe method M80.

In operation S109 of method M100, the second dies 322 of the secondwafer 320 are sigulated, as shown in FIG. 11E. To singulate the seconddie 322 of the second wafer 320 from adjacent second dies 322, tape (notshown) may be applied to the second wafer 320. The tape may includedicing tape that supports the second wafer 320 during the singulationprocess. The second wafer 320 may be singulated using a laser cuttingdevice, saw blade, or other suitable techniques.

In operation S111 of method M100, the first die 312 is bonded on thesecond die 322, as shown in FIG. 11F. Since the details of the bondingprocess is mentioned above (i.e., the operations S24, S46, S66, andS86), the detailed description is not repeated herein.

FIG. 12 is a flowchart of a method M120 for making a semiconductordevice according to aspects of the present disclosure in variousembodiments. Various operations of the method M120 are discussed inassociation with cross-section diagrams FIGS. 13A-13F. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements. In operation S121 of method M120, afirst wafer 310 is provided, as shown in FIG. 13A. The first wafer 310includes a plurality of first dies 312 connected to each other. Each ofthe first dies 312 includes the structure of FIG. 2D, the structure ofFIG. 4D, the structure of FIG. 6D, or the structure of FIG. 8B or 9B.That is, the operation S101 includes the operations S12 to S18 of themethod M10, the operations S32 to S40 of the method M30, the operationsS52 to S60 of the method M50, or the operation S84 of the method M80. InFIG. 11A, the structures of FIG. 2D are used for illustration purposesonly.

In operation S123 of method M120, the first dies 312 of the first wafer310 are sigulated, as shown in FIG. 13B. To singulate the first die 312of the first wafer 310 from adjacent first dies 312, tape (not shown)may be applied to the first wafer 310. The tape may include dicing tapethat supports the first wafer 310 during the singulation process. Thefirst wafer 310 may be singulated using a laser cutting device, sawblade, or other suitable techniques.

In operation S125 of method M100, the 2D insulating layer 120 of thefirst die 312 is removed from the carrier 110, as shown in FIG. 13C.Since the details of the removal process is mentioned above (i.e., theoperations S20, S42, and S62), the detailed description is not repeatedherein.

In operation S127 of method M100, a second wafer 220 is provided, asshown in FIG. 13D. The second wafer 320 includes a plurality of seconddies 322 connected to each other. Each of the second dies 322 includesthe structure of FIG. 2F, the structure of FIG. 4F, the structure ofFIG. 6F, or the structure of FIG. 8A or 9A. That is, the operation S101includes the operation S22 of the method M10, the operation S44 of themethod M30, the operation S64 of the method M50, or the operation S82 ofthe method M80.

In operation S129 of method M100, the first die 312 is bonded to thesecond wafer 320, as shown in FIG. 13E. Since the details of the bondingprocess is mentioned above (i.e., the operations S24, S46, S66, andS86), the detailed description is not repeated herein.

In operation S131 of method M100, the second dies 322 (with the firstdies 312 bonded thereon) of the second wafer 320 are sigulated, as shownin FIG. 13F. To singulate the second die 322 of the second wafer 320from adjacent second dies 322, tape (not shown) may be applied to thesecond wafer 320. The tape may include dicing tape that supports thesecond wafer 320 during the singulation process. The second wafer 320may be singulated using a laser cutting device, saw blade, or othersuitable techniques.

FIG. 14 is a flowchart of a method M140 for making a semiconductordevice according to aspects of the present disclosure in variousembodiments. Various operations of the method M140 are discussed inassociation with cross-section diagrams FIGS. 15A-15F. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements. In operation S141 of method M140, afirst wafer 310 is provided, as shown in FIG. 15A. The first wafer 310includes a plurality of first dies 312 connected to each other. Each ofthe first dies 312 includes the structure of FIG. 2D, the structure ofFIG. 4D, the structure of FIG. 6D, or the structure of FIG. 8B or 9B.That is, the operation S101 includes the operations S12 to S18 of themethod M10, the operations S32 to S40 of the method M30, the operationsS52 to S60 of the method M50, or the operation S84 of the method M80. InFIG. 15A, the structures of FIG. 2D are used for illustration purposesonly.

In operation S143 of method M140, the 2D insulating layer 120 of thefirst dies 312 is removed from the carrier 110, as shown in FIG. 15B.Since the details of the removal process is mentioned above (i.e., theoperations S20, S42, and S62), the detailed description is not repeatedherein.

In operation S145 of method M100, a second wafer 320 is provided, asshown in FIG. 15C. The second wafer 320 includes a plurality of seconddies 322 connected to each other. Each of the second dies 322 includesthe structure of FIG. 2F, the structure of FIG. 4F, the structure ofFIG. 6F, or the structure of FIG. 8A or 9A. That is, the operation S101includes the operation S22 of the method M10, the operation S44 of themethod M30, the operation S64 of the method M50, or the operation S82 ofthe method M80.

In operation S147 of method M140, the second dies 322 of the secondwafer 320 are sigulated, as shown in FIG. 15D. To singulate the seconddie 322 of the second wafer 320 from adjacent second dies 322, tape (notshown) may be applied to the second wafer 320. The tape may includedicing tape that supports the second wafer 320 during the singulationprocess. The second wafer 320 may be singulated using a laser cuttingdevice, saw blade, or other suitable techniques.

In operation S149 of method M100, the first wafer 310 is bonded to thesecond dies 322 of the second wafer 320, as shown in FIG. 15E. Since thedetails of the bonding process is mentioned above (i.e., the operationsS24, S46, S66, and S86), the detailed description is not repeatedherein.

In operation S151 of method M100, the first dies 312 (with the seconddies 322 bonded thereon) of the first wafer 310 are sigulated, as shownin FIG. 15F. To singulate the first die 312 of the first wafer 310 fromadjacent first dies 312, tape (not shown) may be applied to the firstwafer 310. The tape may include dicing tape that supports the firstwafer 310 during the singulation process. The first wafer 310 may besingulated using a laser cutting device, saw blade, or other suitabletechniques.

FIG. 16 is a flowchart of a method M160 for making a semiconductordevice according to aspects of the present disclosure in variousembodiments. Various operations of the method M160 are discussed inassociation with cross-section diagrams FIGS. 17A-17E. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements. In operation S161 of method M140, afirst wafer 310 is provided, as shown in FIG. 17A. The first wafer 310includes a plurality of first dies 312 connected to each other. Each ofthe first dies 312 includes the structure of FIG. 2D, the structure ofFIG. 4D, the structure of FIG. 6D, or the structure of FIG. 8B or 9B.That is, the operation S101 includes the operations S12 to S18 of themethod M10, the operations S32 to S40 of the method M30, the operationsS52 to S60 of the method M50, or the operation S84 of the method M80. InFIG. 17A, the structures of FIG. 2D are used for illustration purposesonly.

In operation S163 of method M160, the 2D insulating layer 120 of thefirst die 312 is removed from the carrier 110, as shown in FIG. 17B.Since the details of the removal process is mentioned above (i.e., theoperations S20, S42, and S62), the detailed description is not repeatedherein.

In operation S165 of method M160, a second wafer 320 is provided, asshown in FIG. 17C. The second wafer 320 includes a plurality of seconddies 322 connected to each other. Each of the second dies 322 includesthe structure of FIG. 2F, the structure of FIG. 4F, the structure ofFIG. 6F, or the structure of FIG. 8A or 9A. That is, the operation S101includes the operation S22 of the method M10, the operation S44 of themethod M30, the operation S64 of the method M50, or the operation S82 ofthe method M80.

In operation S167 of method M160, the first wafer 310 is bonded to thesecond wafer 320, as shown in FIG. 17D. Since the details of the bondingprocess is mentioned above (i.e., the operations S24, S46, S66, andS86), the detailed description is not repeated herein.

In operation S169 of method M160, the first dies 312 of the first wafer310 and the second dies 322 of the second wafer 320 are sigulated, asshown in FIG. 17E. To singulate the first and second dies 312 and 322from adjacent first and second dies 312 and 322, tape (not shown) may beapplied to the first wafer 310 or the second wafer 320. The tape mayinclude dicing tape that supports the first wafer 310 or the secondwafer 320 during the singulation process. The first wafer 310 and thesecond wafer 320 may be singulated using a laser cutting device, sawblade, or other suitable techniques.

FIG. 18 is a cross-sectional view of a semiconductor structure accordingto some embodiments. In FIG. 18, first dies 312 a, 312 b, and 312 c arebound to a second wafer 320 including second dies 322 a, 322 b, and 322c. Each of the first dies 312 a, 312 b, and 312 c includes the structureof FIG. 2D, the structure of FIG. 4D, the structure of FIG. 6D, or thestructure of FIG. 8B or 9B. In FIG. 18, the structures of FIG. 2D areused for illustration purposes only. Each of the second dies 322 a, 322b, and 322 c includes the structure of FIG. 2F, the structure of FIG.4F, the structure of FIG. 6F, or the structure of FIG. 8A or 9A. In FIG.18, the structures of FIG. 2F are used for illustration purposes only.

The first dies 312 a, 312 b, and 312 c may be different. For example,the gate electrodes 150 a, 150 b, and 150 c in the first dies 312 a, 312b, and 312 c may have different work functions and/or differentmaterials. The first dies 312 a, 312 b, and 312 c may be cut fromdifferent wafers in some embodiments. The second dies 312 a, 312 b, and312 c may be different. For example, the channel layers 190 a, 190 b,and 190 c in the second dies 322 a, 322 b, and 322 c may have differentmaterials. The first dies 312 a, 312 b, and 312 c may be respectivelybound to the second dies 322 a, 322 b, and 322 c according to actualrequirements, and a singulation process may be performed after the firstdies 312 a, 312 b, and 312 c are bound to the second dies 312 a, 312 b,and 312 c. With such process, the integration of the multifunctionaldevices is more flexible. That is, different multifunctional devices canbe formed on the same wafer.

According to some embodiments, the 2D insulating layer is a bondinglayer to bond a first structure to a second structure. Since the 2Dinsulating layer is adhered to a carrier through Van der Waals force,the delamination force of the 2D insulating layer is not so strong, andthe structures formed over the 2D insulating layer is not easy to bedamaged during the debonding process. Furthermore, the 2D insulatinglayer provide a good vertical electrical connection path, such that thetwo bonded structures can be electrically connected to each otherthrough the 2D insulating layer. Moreover, the separated fabrications ofthe channel layer and the metal contacts improve the performance of thechannel layer.

According to some embodiments, a semiconductor device includes asubstrate, a channel layer, an insulating layer, source/drain contacts,a gate dielectric layer, and a gate electrode. The channel layer overthe substrate and includes two dimensional (2D) material. The insulatinglayer is on the channel layer. The source/drain contacts are over thechannel layer. The gate dielectric layer is over the insulating layerand the channel layer. The gate electrode is over the gate dielectriclayer and between the source/drain contacts.

According to some embodiments, a semiconductor device includes a firstdevice, a second device, and a bonding layer. The first device includesa first semiconductor device and a first inter-metal dielectric (IMD)structure electrically connected to the first semiconductor device. Thefirst IMD structure includes a first top conductive line. The seconddevice is over the first device and includes a second semiconductordevice and a second IMD structure electrically connected to the secondsemiconductor device. The second IMD structure includes a second topconductive line aligned with the first top conductive line. The bondinglayer is between the first device and the second device. The bondinglayer is a 2D material layer and in contact with the first topconductive line and the second top conductive line.

According to some embodiments, a method for manufacturing asemiconductor device forming a 2D insulating layer on a carrier. A firststructure is formed over the 2D insulating layer. The 2D insulatinglayer and the first structure are removed from the carrier. The 2Dinsulating layer is bonded over a second structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for manufacturing a semiconductor devicecomprising: forming a 2D insulating layer on a carrier; forming a firststructure over the 2D insulating layer; removing the 2D insulating layerand the first structure from the carrier; and bonding the 2D insulatinglayer over a second structure, wherein the second structure comprises achannel layer, and bonding the 2D insulating layer over the secondstructure comprises bonding the 2D insulating layer to the channellayer.
 2. The method of claim 1, wherein forming the first structureover the 2D insulating layer comprises: forming a source/drain contacton the 2D insulating layer; forming a gate dielectric layer over thesource/drain contact and the 2D insulating layer; forming a gateelectrode over the gate dielectric layer; and forming a transfer layerover the gate electrode and the gate dielectric layer.
 3. The method ofclaim 1, wherein forming the first structure over the 2D insulatinglayer comprises: forming a gate dielectric layer on the 2D insulatinglayer; forming a source/drain opening in the gate dielectric layer andin the 2D insulating layer to expose the carrier; forming a source/draincontact in the source/drain opening; forming a gate electrode over thegate dielectric layer; and forming a transfer layer over the gateelectrode, the gate dielectric layer, and the source/drain contact. 4.The method of claim 1, wherein forming the first structure over the 2Dinsulating layer comprises: forming a gate dielectric layer on the 2Dinsulating layer; forming a gate electrode over the gate dielectriclayer; forming a source/drain opening in the gate dielectric layer andin the 2D insulating layer to expose the carrier; and forming a transferlayer over the gate electrode, the gate dielectric layer, and in thesource/drain opening.
 5. The method of claim 1, wherein the channellayer comprises: a first layer comprising chalcogen atoms; a secondlayer over the first layer and comprising transition metal; and a thirdlayer over the second layer and comprising chalcogen atoms.
 6. Themethod of claim 1, wherein the 2D insulating layer is hexagonal boronnitride.
 7. A method for manufacturing a semiconductor devicecomprising: forming an insulating layer over a carrier; forming a gatedielectric layer and a gate electrode over the insulating layer; forminga source/drain opening in the gate dielectric layer and in theinsulating layer to expose the carrier; removing the insulating layer,the gate dielectric layer, and the gate electrode from the carrier;bonding the gate dielectric layer and the gate electrode to a channellayer through the insulating layer such that the insulating layer isbetween the gate dielectric layer and the channel layer; removing aportion of the channel layer exposed by the source/drain opening in thegate dielectric layer and in the insulating layer; and forming asource/drain contact in the source/drain opening and in the channellayer.
 8. The method of claim 7, wherein the insulating layer comprisestwo dimensional (2D) materials.
 9. The method of claim 7, wherein theinsulating layer is hexagonal boron nitride.
 10. The method of claim 7,wherein the channel layer comprises: a first layer comprising chalcogenatoms; a second layer over the first layer and comprising transitionmetal; and a third layer over the second layer and comprising chalcogenatoms.
 11. The method of claim 10, wherein removing the portion of thechannel layer exposed by the source/drain opening in the gate dielectriclayer and in the insulating layer comprises removing a portion of thethird layer of the channel layer such that the second layer of thechannel layer is exposed.
 12. The method of claim 10, wherein formingthe source/drain contact is such that the source/drain contact is incontact with the second layer of the channel layer.
 13. The method ofclaim 7, further comprising forming a transfer layer over the gateelectrode and in the source/drain opening before removing the insulatinglayer, the gate dielectric layer, and the gate electrode from thecarrier.
 14. The method of claim 13, wherein forming the transfer layeris such that the transfer layer is in contact with the carrier.
 15. Amethod for manufacturing a semiconductor structure comprising: providinga first device comprising a first semiconductor device and a firstinter-metal dielectric (IMD) structure connected to the firstsemiconductor device; providing a second device comprising a secondsemiconductor device and a second IMD structure connected to the secondsemiconductor device; forming an insulating layer over the second IMDstructure of the second device; and bonding the second device to thefirst device through the insulating layer at a bonding temperature in arange of about 100° C. to about 300° C. such that the insulating layeris in contact with a first conductive feature of the first IMD structureof the first device and a second conductive feature of the second IMDstructure of the second device.
 16. The method of claim 15, wherein athickness of the insulating layer is in a range of about 3.0 angstromsto about 50 angstroms.
 17. The method of claim 15, wherein bonding thesecond device to the first device is such that the second conductivefeature of the second IMD structure of the second device is directlyabove the first conductive feature of the first IMD structure of thefirst device.
 18. The method of claim 15, further comprising singulatingthe second device prior to bonding the second device to the firstdevice.
 19. The method of claim 15, wherein the insulating layercomprises two dimensional (2D) materials.
 20. The method of claim 15,wherein bonding the second device to the first device through theinsulating layer is performed in a vacuum-environment.